Philips bft92 cnv free download

File name bft92_cnv.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BFT92 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor BFT92 DESCRIPTION PINNING PNP transistor in a plastic SOT23 PIN DESCRIPTION envelope. Code: W1p It is primarily intended for use in RF lfpage 3 1 base wideband amplifiers, such as in aerial 2 emitter amplifiers, radar systems, oscilloscopes, spectrum analyzers, 3 collector etc. The transistor features low 1 2 intermodulation distortion and high Top view MSB003 power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. Fig.1 SOT23. NPN complements are BFR92 and BFR92A. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCEO collector-emitter voltage open base 15 V IC DC collector current 25 mA Ptot total power dissipation up to Ts = 95 C; note 1 300 mW fT transition frequency IC = 14 mA; VCE = 10 V; f = 500 MHz 5 GHz Cre feedback capacitance IC = 2 mA; VCE = 10 V; f = 1 MHz 0.7 pF GUM maximum unilateral power gain IC = 14 mA; VCE = 10 V; 18 dB f = 500 MHz; Tamb = 25 C F noise figure IC = 5 mA; VCE = 10 V; f = 500 MHz; 2.5 dB Tamb = 25 C dim intermodulation distortion IC = 14 mA; VCE = 10 V; RL = 75 ; 60 dB Vo = 150 mV; Tamb = 25 C;